The XPS/plasma deposition chamber enables surface exposure to capacitively-coupled plasma under controlled conditions (gas or mixture, pressure, power, sample temperature) followed by transition to the XPS system for surface analysis.  The introduction chamber also contains apparatus for optical emission spectroscopy in the UV-VIS range.  The XPS chamber features a dual-anode MgKα/Alkα x-ray source, and a 100 mm mean radius hemispherical with channeltron detector, ion gun, and electron gun.

Figure 1.  Plasma deposition chamber with capacitively coupled coil induces plasmas at millitorr pressures and 13.56 MHz.  Sample is mounted on a heated/cooled Ta sample holder that monitors sample temperature.  Transition through a gate valve/Teflon seal result into the UHV chamber allows XPS acquisition.