This system allows atomic layer deposition by exposures to reactive gases at pressures > 1 Torr and temperatures up to 1000 K, followed by purging, pump down and transfer to UHV. The UHV chamber features ambient temperature STM and AFM, Auger electron spectroscopy and electron energy loss spectroscopy, ion gun, and reverse-view low-energy electron diffraction. A constant-current STM image and line scan of an ultrathin h-BN(111) film grown on Ru(0001) surface are shown in Fig. 2.
Figure 1: Schematic of STM-ALD system. Transport from ALD to UHV systems occurs under UHV conditions
Figure 2. (Center, top) 220 x 220 nm constant current STM image of a multilayer h-BN(111) film grown by ALD on a Ru(0001) substrate. (Center, bottom) line scan showing that step heights are 3.2 Å in excellent agreement with 3.3 Å interlayer ILD determined by XRD (inset, left).